丝印：GC11N65；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：792.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：783.72 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N65；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：742.8 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01237 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.28811 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N65；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.07184 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N65；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：792.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：783.72 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N65；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：742.8 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.01237 Mbytes 页数：6 Pages

GOFORD

谷峰半导体