丝印：GC11N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC11N65MA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.28811 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The GC11N65T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.07184 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

N-Channel Super Junction MOSFET

文件：729.14 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

N-Channel Super Junction MOSFET

文件：721.43 Kbytes 页数：7 Pages

HMSEMI

华之美半导体