丝印：GC11N70；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC11N70F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：765.67 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-220F；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-251；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-252；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-220；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC11N70F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：765.67 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-220F；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-251；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-252；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：GC11N70；Package：TO-220；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体