丝印：GC11N70；Package：TO-251；Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

700V N Channel SUPER JUNCTION MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

Power Factor Correction (PFC)

Description The GC11N70 uses advanced super junction technology and design to provide excellent RDS(ON) and low gate charge. This device is suitable for industry AC-DC SMPS requirement of PFC, AC/DC power conversion, and other industrial power application. Application ● Power Factor Corre

文件：2.47652 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

700V N-Channel MOSFET

文件：702.01 Kbytes 页数：8 Pages

HMSEMI

华之美半导体