丝印：GC180N65；Package：DFN8/8-4L；N-Channel Enhancement Mode Power MOSFET

Description The GC180N65D8 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：816.65 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC180N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC180N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：944.04 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC180N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC180N65MF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.15258 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC180N65；Package：DFN8/8-4L；N-Channel Enhancement Mode Power MOSFET

Description The GC180N65D8 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：816.65 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC180N65；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The GC180N65F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：944.04 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：GC180N65；Package：TO-263；N-Channel Enhancement Mode Power MOSFET

Description The GC180N65MF uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.15258 Mbytes 页数：6 Pages

GOFORD

谷峰半导体