丝印：GC11N60；Package：TO-220；Power Factor Correction

Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：4.32953 Mbytes 页数：7 Pages

GOFORD

谷峰半导体

丝印：GC11N60；Package：TO-220；Power Factor Correction (PFC)

Description The GC11N60 uses advanced super junction technology and design to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for industry’s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. Ap

文件：4.32953 Mbytes 页数：7 Pages

GOFORD

谷峰半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

文件：716.92 Kbytes 页数：7 Pages

Huashan

华汕电子器件

600V N-Channel MOSFET

文件：688.54 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

600V N-Channel MOSFET

文件：688.54 Kbytes 页数：7 Pages

HMSEMI

华之美半导体