600V N-Channel MOSFET

文件：688.54 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

600V N-Channel MOSFET

文件：688.54 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.44Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.75 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤440mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.24 Kbytes 页数：2 Pages

ISC

无锡固电