丝印：G120；Package：DO-214AC；Zener Diodes

文件：1.54174 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：G120N02；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G120N02D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.09697 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120N03；Package：DFN3X3-8L；N-Channel Enhancement Mode Power MOSFET

Description The G120N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：717.41 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120N03；Package：DFN3X3-8LDual；DUAL N-Channel Enhancement Mode Power MOSFET

Description The G120N03D32 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：788.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120P03；Package：SOP-8Dual；DUAL P-Channel Enhancement Mode Power MOSFET

Description The G120P03S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：830.93 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120P06；Package：TO-263；P-Channel Enhancement Mode Power MOSFET

Description The G120P06M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：599.26 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120P06；Package：TO-220；P-Channel Enhancement Mode Power MOSFET

Description The G120P06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：492.02 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：G120BJ；Package：HSMT8AG；Pch -40V -12A Power MOSFET

Features 1) Small high-powered package reduces mounting area by 64% at a maximum 2) Realization of high mounting reliability by original terminal and plating treatment 3) AEC-Q101 Qualified Application ADAS/Info./Lighting/Body

文件：2.97057 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：G120BK；Package：HSMT8AG；Nch 40V 12A Power MOSFET

Features 1) Small high-powered package reduces mounting area by 64% at a maximum 2) Realization of high mounting reliability by original terminal and plating treatment 3) AEC-Q101 Qualified Application ADAS/Info./Lighting/Body

文件：2.65207 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：G120M65DF2AG；Package：Max247；Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package

Features • AEC-Q101 qualified • 6 μs of short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 120 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft and very fast recovery antiparallel diode • Maximum j

文件：2.18639 Mbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体