丝印：FDS4435；30V P-Channel PowerTrenchÒ MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load sw

文件：168.22 Kbytes 页数：7 Pages

ONSEMI

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丝印：FDS4435BZ；Package：SOP-8；-30V P-Channel MOSFET

General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

文件：429.15 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：FDS4435BZ；Package：SO-8；P-Channel PowerTrench MOSFET -30V, -8.8A, 20mΩ

Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and

文件：330.44 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS4435BZ；Package：SO-8；P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m

文件：416.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDS4435；30V P-Channel PowerTrenchÒ MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load sw

文件：168.22 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：FDS4435BZ；Package：SOP-8；-30V P-Channel MOSFET

General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS (V) =-30V ID = -8.8A (VGS = -10V) RDS(ON)

文件：429.15 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：FDS4435BZ；Package：SO-8；P-Channel PowerTrench MOSFET -30V, -8.8A, 20mΩ

Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A
Max rDS(on) = 35mΩ at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and

文件：330.44 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：FDS4435BZ；Package：SO-8；P-Channel PowerTrench짰 MOSFET -30V, -8.8A, 20m

文件：416.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

P-Channel Logic Level PowerTrenchTM MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –8.8 A, –30 V RDS(ON) = 20 mW @ VGS

文件：637.39 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel Logic Level PowerTrench?줞OSFET

General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features • –9 A, –30 V. RDS(ON) = 0.017 Ω @ VGS =

文件：264.93 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司