Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ■ 20V, 6A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ -20V, -4.3A, RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability

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CET

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Dual Enhancement Mode Field Effect Transistor(N and P Channel)

CET

华瑞

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