CEM2163

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-20V,-8.9A,RDS(ON)=20mΩ@VGS=-4.5V. RDS(ON)=30mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CEM2163

P-Channel 20-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •BuiltinESDProtectionwithZenerDiode •TypicalESDPerformance:1800V •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PortableDevices -LoadSwitch -BatterySw

CEM2163

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-8.9A,RDS(ON)=20mW@VGS=-4.5V. RDS(ON)=30mW@VGS=-2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CU2163

3G2-way40-400W(3-100WLED)LeadingEdgeDimmer

DESCRIPTION 3G2-way40-400W(3-100WLED)LeadingEdgeDimmer

CX2163LNL

XFMR,RF,SGL,RAC,1:1,800-1900MHZ

RFTRANSFORMERS TransformersforWidebandRFApplications ●RoHSpeakreflowtemperaturerating:245°C° ●Miniaturesurfacemountpackage ●Variousimpedanceratiosavailable ●Excellentinsertionloss ●IdealforBalanced-to-Unbalancedapplications ●Productsfrom0.05to1900MHzbandwidt

CX2163LNL

RFTRANSFORMERSTransformersforWidebandRFApplications

RFTRANSFORMERS TransformersforWidebandRFApplications ●RoHSpeakreflowtemperaturerating:245°C° ●Miniaturesurfacemountpackage ●Variousimpedanceratiosavailable ●Excellentinsertionloss ●IdealforBalanced-to-Unbalancedapplications ●Productsfrom0.05to1900MHzbandwidt