N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 14A, RDS(ON) = 7.8mW @VGS = 10V. RDS(ON) = 11.5mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

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CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

文件：108 Kbytes 页数：7 Pages

PANASONIC

松下

Silicon planer type

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PANASONIC

松下

6-Pin DIP Zero-Cross Optoisolators Triac Driver Output

The MOC3061, MOC3062 and MOC3063 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon detectors performing the functions of Zero Voltage Crossing bilateral triac drivers. They are designed for use with a triac in the interface of logic systems to eq

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MOTOROLA

摩托罗拉