CEM2182

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 20V,9.3A,RDS(ON)=18mW@VGS=4.5V. RDS(ON)=24mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM2182

N-Channel Enhancement Mode Field Effect Transistor

CEU2182

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,42A,RDS(ON)=18mΩ@VGS=4.5V. RDS(ON)=25mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CM2182

T-13/4WireTerminal(standard)

T-13/4WireTerminal(standard)

CT2182LPST-ND

DIPSwitches

DMF2182

SiliconBeam-LeadandChipSchottkyBarrierMixerDiodes

DS2182

T1LineMonitor

DESCRIPTION TheDS2182AT1linemonitorchipisamonolithicCMOSdevicedesignedtomonitorreal-timeperformanceonT1lines.TheDS2182Aframestothedataontheline,countserrors,andsuppliesdetailedinformationaboutthestatusandconditionoftheline.Largeon-boardcountersallowth

DS2182A

T1LineMonitor

DESCRIPTION TheDS2182AT1linemonitorchipisamonolithicCMOSdevicedesignedtomonitorreal-timeperformanceonT1lines.TheDS2182Aframestothedataontheline,countserrors,andsuppliesdetailedinformationaboutthestatusandconditionoftheline.Largeon-boardcountersallowth

ECQB2182MF

PlasticFilmCapacitors

ECQU2182KL

MetallizedPolyesterFilmCapacitor

Features ●Compact ●Flame-retardantplasticcaseandnon-combustibleresin ●RoHScompliant Recommendedapplications ●Interferencesuppressors