COM Express Type 10 Development Baseboard

Features ● COM Express Type 10 baseboard ● 2 SATA-300 and SD card slot ● 1 PCI Express Mini Card slot ● 5 USB 2.0 and 2 USB 3.0 ● Port 80 display for debugging

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COM Express Type 10 Mini Module with Intel® Pentium® Processor N4200 & Celeron® Processor N3350

Features ● Intel® Pentium® processor N4200 & Celeron® processor N3350 (Apollo Lake) ● 4GB DDR3L / 8GB LPDDR4 memory onboard ● Max. up to 4 lanes of PCI Express ● 2 SATA-600 ● 2 USB 3.0 and 8 USB 2.0

文件：558.73 Kbytes 页数：3 Pages

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COM Express Type 10 Mini Module with Intel Pentium Processor N4200 & Celeron

文件：272.93 Kbytes 页数：1 Pages

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COM Express Type 10 Mini Module with Intel® Pentium® Processor N4200 & Celeron® Processor N3350

Features ● Intel® Pentium® processor N4200 & Celeron® processor N3350 (Apollo Lake) ● 4GB DDR3L / 8GB LPDDR4 memory onboard ● Max. up to 4 lanes of PCI Express ● 2 SATA-600 ● 2 USB 3.0 and 8 USB 2.0

文件：558.73 Kbytes 页数：3 Pages

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 11.9A, RDS(ON) = 11 mW @VGS = 10V. RDS(ON) = 15 mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：426.43 Kbytes 页数：5 Pages

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -12A, RDS(ON) = 12mW @VGS = -10V. RDS(ON) = 16mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：388.77 Kbytes 页数：5 Pages

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Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -9.5A, RDS(ON) = 14mW @VGS = -10V. RDS(ON) = 18mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. DC-DC switching,DC power switch Applications

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Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 10.2A, RDS(ON) = 12mW @VGS = 10V. RDS(ON) = 16mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：506.85 Kbytes 页数：5 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V, 8A, RDS(ON) = 20mW @VGS = 10V. FEATURES RDS(ON) = 30mW @VGS = 4.5V. -30V, -8A, RDS(ON) = 20mW @VGS = -10V. RDS(ON) = 30mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：860.68 Kbytes 页数：7 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 8A, RDS(ON) = 20mW @VGS = 4.5V. FEATURES -30V, -6A, RDS(ON) = 34mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 26mW @VGS = 2.5V.

文件：584.36 Kbytes 页数：7 Pages

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