Dual Enhancement Mode Field Effect Transistor (N and P Channel)

30V, 8A, RDS(ON) = 20mW @VGS = 10V. FEATURES RDS(ON) = 30mW @VGS = 4.5V. -30V, -8A, RDS(ON) = 20mW @VGS = -10V. RDS(ON) = 30mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：860.68 Kbytes 页数：7 Pages

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Dual N & P MOSFET

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 8A, RDS(ON) = 20mW @VGS = 4.5V. FEATURES -30V, -6A, RDS(ON) = 34mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 26mW @VGS = 2.5V.

文件：584.36 Kbytes 页数：7 Pages

CET-MOS

华瑞

Dual N & P MOSFET

CET

华瑞

Dual N & P MOSFET

CET

华瑞