Dual N & P MOSFET

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

20V, 8A, RDS(ON) = 20mW @VGS = 4.5V. FEATURES -30V, -6A, RDS(ON) = 34mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 26mW @VGS = 2.5V.

文件：584.36 Kbytes 页数：7 Pages

CET-MOS

华瑞

Dual N & P MOSFET

CET

华瑞

Inductor for Digital AMP

Features： Core material:Ferrite Core and winding loss: www.codaca.com/DesignTool_Power-Inductor-Loss-Comparison.html Environmental:RoHS compliant, halogen free Weight:69.32g Moisture Sensitivity:Level (MSL) 1 (unlimited floor life at

文件：792.22 Kbytes 页数：4 Pages

CODACA

科达嘉电子

Power Inductor for Digital Amplifier - Shielded

文件：234.65 Kbytes 页数：2 Pages

CT

Central Technologies

Thermocouple Termination Glands & Locknuts

文件：274.28 Kbytes 页数：1 Pages

TTELEC