CEM3109

Dual Enhancement Mode Field Effect Transistor

FEATURES ■30V,10A,RDS(ON)=14mΩ@VGS=10V. RDS(ON)=20mΩ@VGS=4.5V. ■-30V,-8A,RDS(ON)=20mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■

CEM3109

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V,10A,RDS(ON)=14mW@VGS=10V. RDS(ON)=20mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Lead-freeplating;RoHScompliant. -30V,-8A,RDS(ON)=20mW@VGS=-10V. RDS(ON)=30mW@VGS

CEU3109

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES 30V,22A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=20mW@VGS=4.5V. Lead-freeplating;RoHScompliant. -30V,-18A,RDS(ON)=20mW@VGS=10V. RDS(ON)=30mW@VGS

CM3109

2ASink/SourceRegulatorforFrontSideBusandDDRMemoryBusTermination

ProductDescription TheCM3109isasinkingandsourcingregulatorspecificallydesignedforseries-parallelbusterminationforhighspeedchipsetbusesaswellasDDRmemorysystems.Itcansourceandsinkcurrentupto2Awithhighaccuracyof0.5.TheVTToutputvoltageisselectablebyVDD

CPH3109

DC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Ultrasmallpackagefacilitatesminiaturizationinendproducts(mountingheight:0.9mm). •Highallowablepowerdissipat

CPH3109-TL-E

BipolarTransistor

CSS-3109E

0.31InchSingleDigitDisplay

CSS-3109G

0.31InchSingleDigitDisplay

CSS-3109S

0.31InchSingleDigitDisplay

FJV3109R

NPNEpitaxialSiliconTransistor

SwitchingApplication(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit •BuiltinbiasResistor(R=4.7KΩ) •ComplementtoFJV4109R