Dual Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 10A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. ■ -30V, -8A, RDS(ON) = 20mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■

文件：620.82 Kbytes 页数：7 Pages

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V, 10A, RDS(ON) = 14mW @VGS = 10V. RDS(ON) = 20mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead-free plating ; RoHS compliant. -30V, -8A, RDS(ON) = 20mW @VGS = -10V. RDS(ON) = 30mW @VGS

文件：686 Kbytes 页数：7 Pages

CET-MOS

华瑞

N+P Power MOSFET

CET

华瑞

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V , 22A , RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 20mW @VGS = 4.5V. Lead-free plating ; RoHS compliant. -30V , -18A , RDS(ON) = 20mW @VGS = 10V. RDS(ON) = 30mW @VGS

文件：841.4 Kbytes 页数：7 Pages

CET-MOS

华瑞

2A Sink/Source Regulator for Front Side Bus and DDR Memory Bus Termination

Product Description The CM3109 is a sinking and sourcing regulator specifically designed for series-parallel bus termination for high speed chip set buses as well as DDR memory systems. It can source and sink current up to 2A with high accuracy of 0.5 . The VTT output voltage is selectable by VDD

文件：542.88 Kbytes 页数：12 Pages

CALMIRCO

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). • High allowable power dissipat

文件：55.66 Kbytes 页数：5 Pages

SANYO

三洋