CEM3100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,12A,RDS(ON)=12mW@VGS=10V. RDS(ON)=19mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEP3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,47A,RDS(ON)=12mΩ@VGS=10V. RDS(ON)=21mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220package.

CEP3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,47A,RDS(ON)=12mW@VGS=10V. RDS(ON)=21mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220package. RoHScompliant.

CEU3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU3100

N-ChannelMOSFETusesadvancedtrenchtechnology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=55A,RDS(ON)

CEU3100

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CP3100SC

SMBPlastic-EncapsulateDiodes

CR3100SA

TheCRrangeofprotectorsarebasedontheproventechnologyoftheT10thyristorproduct

CR3100SA

Thyristors(SiBODBreakoverDevices)

[CRYDOM] GetTVSInsuranceFrom ThePeopleWhoKnow There’stoomuchridingonover-voltagesurgeprotectiontotakechances.That’swhymoreandmorepeopleareturningtoCrydom. Crydom’sSiBODSeriesEquals “CrowBar”Protection Toprotectsensitivetelecommunicationscircuitry,CrydomTh

CR3100SB

TheCRrangeofprotectorsarebasedontheproventechnologyoftheT10thyristorproduct