Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 6A, RDS(ON) = 25mΩ @VGS = 4.5V. RDS(ON) = 31mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

文件：1.00546 Mbytes 页数：5 Pages

CET

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

TUNING FORK CRYSTAL IN SMD 1.6X1.0MM CERAMIC SEAM SEAL PACKAGE

FEATURES Small dimensions 1.6x1.0x0.5mm with 2 solder pads. Highly reliable vacuum seam sealed ceramic package. Usable for high temperature reflow. RoHS compliant, LEAD-FREE and HALOGEN-FREE. APPLICATIONS Mobil communication devices Handheld equipment

文件：339.98 Kbytes 页数：1 Pages

HANGJING

杭晶电子

Plug-in Signal Conditioners K-UNIT

文件：126.19 Kbytes 页数：4 Pages

MSYSTEM

爱模

Plug-in Signal Conditioners K-UNIT

文件：126.19 Kbytes 页数：4 Pages

MSYSTEM

爱模