CEB1188SA规格书应用电路批发采购华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEB1188SA	文件：421.19 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：421.19 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CED1188SA	文件：428.37 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 800V, 6.8A, RDS(ON) = 0.72W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. 文件：428.37 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF1188	文件：905.88 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：905.88 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF1188SA	文件：421.19 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：421.19 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CEB1188SA供应商更新时间2025-12-22 12:00:00