| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CEB30P03 | P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -30A, RDS(ON) =32mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =50mW @VGS = -4.5V. Lead free product is acquired. 文件:617.68 Kbytes 页数:4 Pages | CET-MOS 华瑞 | CET-MOS | |
CEB30P03 | P Channel MOSFET | CET 华瑞 | CET | |
P-Channel Enhancement Mode Field Effect Transistor 文件:399.79 Kbytes 页数:4 Pages | CET 华瑞 | CET | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -30A, RDS(ON) =32mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =50mW @VGS = -4.5V. Lead free product is acquired. 文件:617.68 Kbytes 页数:4 Pages | CET-MOS 华瑞 | CET-MOS | ||
P?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 30mΩ ID ‐22A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free 文件:215.19 Kbytes 页数:6 Pages | EXCELLIANCE 杰力科技 | EXCELLIANCE |
技术参数
- BVDSS(V):
-30/
- Rds(on)mΩ@10V:
32/
- Rds(on)mΩ@4.5V:
50/
- ID(A):
-30/
- Qg(nC)@10V(typ):
24/
- RθJC(℃/W):
3
- Pd(W):
50
- Configuration:
Single
- Polarity:
P
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
VBsemi |
21+ |
TO263 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
CET |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VBsemi |
24+ |
TO263 |
18000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
询价 | ||
CET/華瑞 |
2511 |
TO-263 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 | ||
CET |
24+ |
30000 |
询价 | ||||
SR |
23+ |
T0-263 |
5000 |
原装正品,假一罚十 |
询价 | ||
CET |
18+ |
TO-263 |
41200 |
原装正品,现货特价 |
询价 |
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