P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -30A, RDS(ON) =32mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =50mW @VGS = -4.5V. Lead free product is acquired.

文件：617.68 Kbytes 页数：4 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

文件：399.79 Kbytes 页数：4 Pages

CET

华瑞

P Channel MOSFET

CET

华瑞

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 30mΩ ID ‐22A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：215.19 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 30mΩ ID ‐8A Pb‐Free Lead Plating & Halogen Free

文件：183.73 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

-30VDS竊뤒?0VGS竊?30A(ID) P-Channel Enhancement Mode MOSFET

文件：1.28827 Mbytes 页数：4 Pages

HMSEMI

华之美半导体