CEB20N65SF资料datasheet下载库存现货华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEB20N65SF	文件：400.95 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time. Drive circuits can be simple. 文件：400.95 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CECS20N65LN	文件：500.16 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 19A, RDS(ON) = 180mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：500.16 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CECS20N65SA	文件：633.07 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 19A, RDS(ON) = 180mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：633.07 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF20N65S	文件：659.3 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：659.3 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CEB20N65SF供应商更新时间2025-10-13 12:00:00