CECS20N65SA资料使用说明书供应商报价华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CECS20N65SA	文件：633.07 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 19A, RDS(ON) = 180mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：633.07 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CECS20N65SA	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CEF20N65S	文件：659.3 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：659.3 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF20N65SA	文件：529.61 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：529.61 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF20N65SF	文件：400.95 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. Fast reverse recovery time. Drive circuits can be simple. 文件：400.95 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CECS20N65SA供应商更新时间2025-10-13 12:00:00