| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CEB45N65S | N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：410.46 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | |
CEB45N65S | N Channel MOSFET | CET 华瑞 | CET | |
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：490.68 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：410.46 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：490.68 Kbytes 页数：5 Pages | CET-MOS 华瑞 | CET-MOS |
技术参数
- BVDSS(V)：
650
- Rds(on)mΩ@10V：
70
- ID(A)：
45
- Qg(nC)@10V(typ)：
79
- RθJC(℃/W)：
0.35
- Pd(W)：
357
- Configuration：
Single
- Polarity：
N
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
2511 |
TO-263 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
CET |
24+ |
TO-263-3 |
8866 |
询价 | |||
VBsemi |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
询价 | ||
CET |
24+ |
TO-263 |
90000 |
进口原装现货假一罚十价格合理 |
询价 | ||
CET |
18+ |
TO-263 |
41200 |
原装正品,现货特价 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
DIP-6 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
C |
TO-263 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
CET/華瑞 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
CET/華瑞 |
20+ |
TO-263 |
32500 |
现货很近!原厂很远!只做原装 |
询价 | ||
CET |
25+ |
SOT-263 |
500 |
原装正品,假一罚十! |
询价 |
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