N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 47A, RDS(ON) = 70mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-247 package. RoHS compliant.

文件：421.49 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

360mΩ, 650V GaN HEMT With Integrated Driver and Protection

• 650V enhancement mode HEMT with integrated driver • 360mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation 2.0 To

文件：2.41575 Mbytes 页数：15 Pages

DINTEK

尚鼎芯

360mΩ, 650V GaN HEMT With Integrated Driver and Protection

• 650V enhancement mode HEMT with integrated driver • 360mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz operation 2.0 To

文件：2.41575 Mbytes 页数：15 Pages

DINTEK

尚鼎芯

SUPERIORIOR GaN DTQ45N65GS – 360mΩ, 650V GaN HEMT

1.0 Features • 650V, 360mΩ enhancement mode power HEMT • Adapt to various PWM controllers • Zero reverse recovery • Adjustable turn-on slew rate • High switching frequency (>2MHz) • Reverse conduction capable • Enhanced thermal performance with NC center pad • Simple and low cost interface

文件：3.56154 Mbytes 页数：17 Pages

DINTEK

尚鼎芯