CECS20N65LN规格书应用电路行情报价华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CECS20N65LN	文件：500.16 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 19A, RDS(ON) = 180mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：500.16 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CECS20N65LN	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CECS20N65SA	文件：633.07 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 19A, RDS(ON) = 180mW @VGS = 10V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：633.07 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF20N65S	文件：659.3 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：659.3 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF20N65SA	文件：529.61 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：529.61 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CECS20N65LN供应商更新时间2025-10-10 16:44:00