CEB13N65S资料datasheet下载原装现货华瑞-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
CEB13N65S	文件：717.4 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：717.4 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEB13N65S	文件：300 bytes Page：1 Pages	N Channel MOSFET	CET 华瑞	CET
CED13N65S	文件：504.6 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V@TJ max, 12.3A, RDS(ON) = 0.32W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. 文件：504.6 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEF13N65S	文件：717.4 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：717.4 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS
CEP13N65S	文件：717.4 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. 文件：717.4 Kbytes 页数：5 Pages	CET-MOS 华瑞	CET-MOS

更多CEB13N65S供应商更新时间2025-10-13 11:20:00