P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -90A, RDS(ON) = 5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 9.1mW @VGS = -4.5V.

文件：443.6 Kbytes 页数：5 Pages

CET-MOS

华瑞

P Channel MOSFET

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -87A, RDS(ON) = 5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 9.1mW @VGS = -4.5V. RoHS compliant.

文件：535.45 Kbytes 页数：5 Pages

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -15A, RDS(ON) = 7mΩ @VGS = -10V. RDS(ON) = 15mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ Surface mount Package. ■ ESD Protected: 4000 V

文件：391.1 Kbytes 页数：4 Pages

CET

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -16.4A, RDS(ON) = 5.8mW @VGS = -10V. RDS(ON) = 9.1mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：782.81 Kbytes 页数：5 Pages

CET-MOS

华瑞