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AS4LC2M8S1-8TC

3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM

Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel

ALSC

Alliance Semiconductor Corporation

AS4LC4M16

4 MEG x 16 DRAM

GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin

AUSTIN

Austin Semiconductor

AS4LC4M16DG-5S/IT

4 MEG x 16 DRAM

GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin

AUSTIN

Austin Semiconductor

AS4LC4M16DG-5S/XT

4 MEG x 16 DRAM

GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin

AUSTIN

Austin Semiconductor

AS4LC4M16DG-5SSLASHIT

4 MEG x 16 DRAM

GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin

AUSTIN

Austin Semiconductor

AS4LC4M16DG-5SSLASHXT

4 MEG x 16 DRAM

GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin

AUSTIN

Austin Semiconductor

AS4LC4M16DG-6S/IT

4 MEG x 16 DRAM

GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin

AUSTIN

Austin Semiconductor

AS4LC4M16DG-6S/XT

4 MEG x 16 DRAM

GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin

AUSTIN

Austin Semiconductor

AS4LC4M16DG-6SSLASHIT

4 MEG x 16 DRAM

GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin

AUSTIN

Austin Semiconductor

AS4LC4M16DG-6SSLASHXT

4 MEG x 16 DRAM

GENERALDESCRIPTION The4Megx16DRAMisahigh-speedCMOS,dynamicrandom-accessmemorydevicecontaining67,108,864bitsanddesignedtooperatefrom3Vto3.6V.Thedeviceisfunctionallyorganizedas4,194,304locationscontaining16bitseach.The4,194,304memorylocationsarearrangedin

AUSTIN

Austin Semiconductor

详细参数

  • 型号:

    AS4LC

  • 制造商:

    AUSTIN

  • 制造商全称:

    Austin Semiconductor

  • 功能描述:

    1 MEG x 16 DRAM

供应商型号品牌批号封装库存备注价格
ASC
24+
SOJ
5000
绝对原装自家现货!真实库存!欢迎来电!
询价
ALLIANCE
24+/25+
29
原装正品现货库存价优
询价
AIL
23+
SOJ/40
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
ASC
00+
SOJ40
3300
全新原装进口自己库存优势
询价
24+
SOP
7003
询价
ALLIANCE
23+
SOP
5000
原装正品,假一罚十
询价
ALLIANCE
06+
TSOP
1000
自己公司全新库存绝对有货
询价
ALLIANCE
2016+
SOJ40
6523
只做进口原装现货!假一赔十!
询价
ALLI
16+
NA
8800
原装现货,货真价优
询价
ALLAIAN
2020+
SOJ
1450
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多AS4LC供应商 更新时间2025-7-28 16:39:00