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AS4LC4M4

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns). FEATURES •

AUSTIN

Austin Semiconductor

AS4LC4M4883C

4 MEG x 4 DRAM 3.3V, EDO PAGE MODE

GENERALDESCRIPTION TheAS4LC4M4isarandomlyaccessedsolid-statememorycontaining16,777,216bitsorganizedinax4configuration. FEATURES •Industry-standardx4pinout,timing,functionsandpackages •High-performanceCMOSsilicon-gateprocess •Single+3.3V±0.3Vpowersupply •Low

AUSTIN

Austin Semiconductor

AS4LC4M4DG-6/IT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns). FEATURES •

AUSTIN

Austin Semiconductor

AS4LC4M4DG-6/XT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns). FEATURES •

AUSTIN

Austin Semiconductor

AS4LC4M4DG-6SLASHIT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10%)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns). FEATUR

AUSTIN

Austin Semiconductor

AS4LC4M4DG-6SLASHXT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10%)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns). FEATUR

AUSTIN

Austin Semiconductor

AS4LC4M4DG-7/IT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns). FEATURES •

AUSTIN

Austin Semiconductor

AS4LC4M4DG-7/XT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns). FEATURES •

AUSTIN

Austin Semiconductor

AS4LC4M4DG-7SLASHIT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10%)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns). FEATUR

AUSTIN

Austin Semiconductor

AS4LC4M4DG-7SLASHXT

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERALDESCRIPTION TheAustinSemiconductor,Inc.AS4C4M4DGisa4,194,304x4bitFastPageModeCMOSDRAMofferinghighspeedrandomaccessofmemorycellswithinthesamerow.Thisdevicefeaturesa+5V(±10%)powersupply,refreshcycle(2K),andfastaccesstimes(60and70ns). FEATUR

AUSTIN

Austin Semiconductor

详细参数

  • 型号:

    AS4LC4M4

  • 制造商:

    AUSTIN

  • 制造商全称:

    Austin Semiconductor

  • 功能描述:

    4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

供应商型号品牌批号封装库存备注价格
ALSC
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
ASI
23+
SOJ24
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
ALLINCE
22+
TSOP-44
8200
原装现货库存.价格优势!!
询价
ALLANCE
2016+
SOJ
2500
只做原装,假一罚十,公司可开17%增值税发票!
询价
ASI
24+
SOJ24
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
ASI
SOJ24
16
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ASI
23+
SOJ24
16
全新原装正品现货,支持订货
询价
ASI
20+
SOJ24
16
进口原装现货,假一赔十
询价
ASI
21+
SOJ24
16
原装现货假一赔十
询价
raltron
24+
500000
行业低价,代理渠道
询价
更多AS4LC4M4供应商 更新时间2025-5-30 8:02:00