4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATURES •

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4 MEG x 4 DRAM 3.3V, EDO PAGE MODE

GENERAL DESCRIPTION The AS4LC4M4 is a randomly accessed solid-state memory containing 16,777,216 bits organized in a x4 configuration. FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply • Low

文件：191.71 Kbytes 页数：20 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATURES •

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATURES •

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATUR

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATUR

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATURES •

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATURES •

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATUR

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATUR

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN