4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATUR

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATURES •

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATURES •

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATUR

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN