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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
AS4LC1M16	文件：195.31 Kbytes Page：22 Pages	1 MEG x 16 DRAM	AUSTIN AUSTIN	AUSTIN
AS4LC1M16E5	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-50JC	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-50JI	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-50TC	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-50TI	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-60JC	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-60JI	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-60TC	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-60TI	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16S0	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S0-10TC	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S0-7TC	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S0-8TC	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1-10TC	文件：712.96 Kbytes Page：28 Pages	3.3V 2M x 8/1M x 16 CMOS synchronous DRAM Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1-10TC	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1-12TC	文件：712.96 Kbytes Page：28 Pages	3.3V 2M x 8/1M x 16 CMOS synchronous DRAM Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1-7TC	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1-8TC	文件：712.96 Kbytes Page：28 Pages	3.3V 2M x 8/1M x 16 CMOS synchronous DRAM Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective	ALSC Alliance Semiconductor Corporation	ALSC

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详细参数

型号：
AS4LC1M16
制造商：
AUSTIN
制造商全称：
Austin Semiconductor
功能描述：
1 MEG x 16 DRAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	AS4LC1M16E5-60TI	ALLIANCE	22+	TSOP-50	2630		询价
深圳市科恒伟业电子有限公司	AS4LC1M16S1-8TC	ALLIANCE	2016+	TSOP50	6523	房间原装进口现货假一赔十	询价
深圳市深创辉科技有限公司	AS4LC1M16E5-60TC	ALLIANCE			29	原装正品长期供货，如假包赔包换徐小姐13714450367	询价
鑫勃源（上海北京青岛）有限公司	AS4LC1M16S0-10TC	ALLIANCE	23+	CDIP	18000		询价
深圳市凌旭科技有限公司	AS4LC1M16E5-60JC	ALLAIAN	2016+	SOJ	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市益百分电子有限公司	AS4LC1M16E5-60TC	ALLIANCE	03+	TSOP44	1350	全新原装进口自己库存优势	询价
深圳市一线半导体有限公司	AS4LC1M16E5-60TC		06/07+	SOP	7003		询价
深圳市凯斯宇科技有限公司	AS4LC1M16ES-60TC	ALLAIANCE	2022		8800	原厂原装正品,价格超越代理	询价
深圳市向鸿伟业电子有限公司	AS4LC1M16S1-10TC	ALLIANCE	1635+		6000	好渠道!好价格!一片起卖!	询价
深圳市莱克讯科技有限公司	AS4LC1M16E5-60JC	ALLIANCE	2017+	SOJ42	32547	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价

更多AS4LC1M16供应商更新时间2024-5-24 14:55:00

详细参数

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