4 MEG x 16 DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件：519.62 Kbytes 页数：25 Pages

AUSTIN

4 MEG x 16 DRAM Extended Data Out (EDO) DRAM

文件：3.76256 Mbytes 页数：25 Pages

AUSTIN

4 MEG x 16 DRAM

Austin Semiconductor

4 MEG x 16 DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件：519.62 Kbytes 页数：25 Pages

AUSTIN

4 MEG x 16 DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件：519.62 Kbytes 页数：25 Pages

AUSTIN

4 MEG x 16 DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件：519.62 Kbytes 页数：25 Pages

AUSTIN

4 MEG x 16 DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件：519.62 Kbytes 页数：25 Pages

AUSTIN

4 MEG x 16 DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件：519.62 Kbytes 页数：25 Pages

AUSTIN

4 MEG x 16 DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件：519.62 Kbytes 页数：25 Pages

AUSTIN

4 MEG x 16 DRAM

GENERAL DESCRIPTION The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in

文件：519.62 Kbytes 页数：25 Pages

AUSTIN