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AS4LC4M16DG-6S/XT中文资料PDF规格书
AS4LC4M16DG-6S/XT规格书详情
GENERAL DESCRIPTION
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 columns.
FEATURES
• Single +3.3V ±0.3V power supply.
• Industry-standard x16 pinout, timing, functions, and package.
• 12 row, 10 column addresses
• High-performance CMOS silicon-gate process
• All inputs, outputs and clocks are LVTTL-compatible
• Extended Data-Out (EDO) PAGE MODE access
• 4,096-cycle CAS-BEFORE-RAS (CBR) REFRESH distributed across 64ms
• Optional self refresh (S) for low-power data retention
• Level 1 Moisture Sensitivity Rating, JEDEC J-STD-020
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ALLANCE |
2016+ |
SOJ |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ASI |
2020+ |
SOJ24 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ASI |
21+ |
SOJ24 |
16 |
原装现货假一赔十 |
询价 | ||
ASI |
SOJ24 |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | |||
VISHAY-威世 |
24+25+/26+27+ |
TO-277 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ALLINCE |
22+ |
TSOP-44 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
ALLIANCE |
2023+ |
TSOP-44 |
50000 |
原装现货 |
询价 | ||
Vishay |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ASI |
SOJ24 |
16 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | |||
23+ |
N/A |
67000 |
一级代理放心采购 |
询价 |