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AS4LC4M16DG-5S/XT中文资料PDF规格书
AS4LC4M16DG-5S/XT规格书详情
GENERAL DESCRIPTION
The 4 Meg x 16 DRAM is a high-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096 rows by 1,024 columns.
FEATURES
• Single +3.3V ±0.3V power supply.
• Industry-standard x16 pinout, timing, functions, and package.
• 12 row, 10 column addresses
• High-performance CMOS silicon-gate process
• All inputs, outputs and clocks are LVTTL-compatible
• Extended Data-Out (EDO) PAGE MODE access
• 4,096-cycle CAS-BEFORE-RAS (CBR) REFRESH distributed across 64ms
• Optional self refresh (S) for low-power data retention
• Level 1 Moisture Sensitivity Rating, JEDEC J-STD-020
产品属性
- 型号:
AS4LC4M16DG-5S/XT
- 制造商:
AUSTIN
- 制造商全称:
Austin Semiconductor
- 功能描述:
4 MEG x 16 DRAM Extended Data Out(EDO) DRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ALLANCE |
2016+ |
SOJ |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ASI |
2020+ |
SOJ24 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
raltron |
22+ |
500000 |
行业低价,代理渠道 |
询价 | |||
ALSC |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
ASI |
21+ |
SOJ24 |
16 |
原装现货假一赔十 |
询价 | ||
ASI/Advanced Semiconductor, In |
21+ |
SOJ24 |
16 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ASI |
SOJ24 |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | |||
VISHAY-威世 |
24+25+/26+27+ |
TO-277 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ALLINCE |
22+ |
TSOP-44 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
ALLIANCE |
2023+ |
TSOP-44 |
50000 |
原装现货 |
询价 |