3.3V 256K X 16 CMOS DRAM (EDO)

Functional description The AS4LC256K16EO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4LC256K16EO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely

文件：530.56 Kbytes 页数：25 Pages

ALSC

3.3V 256K X 16 CMOS DRAM (EDO)

Functional description The AS4LC256K16EO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4LC256K16EO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely

文件：530.56 Kbytes 页数：25 Pages

ALSC

3.3V 256K X 16 CMOS DRAM (EDO)

Functional description The AS4LC256K16EO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4LC256K16EO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely

文件：530.56 Kbytes 页数：25 Pages

ALSC

3.3V 256K X 16 CMOS DRAM (EDO)

Functional description The AS4LC256K16EO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4LC256K16EO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely

文件：530.56 Kbytes 页数：25 Pages

ALSC

3.3V 256K X 16 CMOS DRAM (EDO)

Functional description The AS4LC256K16EO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4LC256K16EO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely

文件：530.56 Kbytes 页数：25 Pages

ALSC

3.3V 256K X 16 CMOS DRAM (EDO)

Functional description The AS4LC256K16EO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4LC256K16EO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely

文件：530.56 Kbytes 页数：25 Pages

ALSC

3.3V 256K x 16 CMOS DRAM (EDO)

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