AS4LC1M16E5

3V 1M X 6 CMOS DRAM (EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

AS4LC1M16E5

3V 1M x 16 CMOS DRAM (EDO);

AllianceMemory

AS4LC1M16E5-50JC

3V 1M X 6 CMOS DRAM (EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

AS4LC1M16E5-50JI

3V 1M X 6 CMOS DRAM (EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

AS4LC1M16E5-50TC

3V 1M X 6 CMOS DRAM (EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

AS4LC1M16E5-50TI

3V 1M X 6 CMOS DRAM (EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

AS4LC1M16E5-60JC

3V 1M X 6 CMOS DRAM (EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

AS4LC1M16E5-60JI

3V 1M X 6 CMOS DRAM (EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

AS4LC1M16E5-60TC

3V 1M X 6 CMOS DRAM (EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe

AS4LC1M16E5-60TI

3V 1M X 6 CMOS DRAM (EDO)

[AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe