首页 >AS4LC2M8S1>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AS4LC2M8S1 | 3.3V 2M x 8/1M x 16 CMOS synchronous DRAM Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective | ALSC Alliance Semiconductor Corporation | ALSC | |
AS4LC2M8S1 | 3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel | ALSC Alliance Semiconductor Corporation | ALSC | |
3.3V 2M x 8/1M x 16 CMOS synchronous DRAM Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective | ALSC Alliance Semiconductor Corporation | ALSC | ||
3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel | ALSC Alliance Semiconductor Corporation | ALSC | ||
3.3V 2M x 8/1M x 16 CMOS synchronous DRAM Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective | ALSC Alliance Semiconductor Corporation | ALSC | ||
3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel | ALSC Alliance Semiconductor Corporation | ALSC | ||
3.3V 2M x 8/1M x 16 CMOS synchronous DRAM Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective | ALSC Alliance Semiconductor Corporation | ALSC | ||
3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel | ALSC Alliance Semiconductor Corporation | ALSC |
详细参数
- 型号：
AS4LC2M8S1
- 制造商：
ALSC
- 制造商全称：
Alliance Semiconductor Corporation
- 功能描述：
3.3V 2M × 8/1M × 16 CMOS synchronous DRAM
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ALSC |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
ALLIANCE |
23+ |
TSOP-44 |
5177 |
现货 |
询价 | ||
ALLIANCE |
2023+ |
TSOP-44 |
50000 |
原装现货 |
询价 | ||
ASI |
23+ |
SOJ24 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
ALLINCE |
22+ |
TSOP-44 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
ALLANCE |
2016+ |
SOJ |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ASI |
24+ |
SOJ24 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ASI |
SOJ24 |
16 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | |||
ASI |
23+ |
SOJ24 |
16 |
全新原装正品现货,支持订货 |
询价 | ||
ASI |
20+ |
SOJ24 |
16 |
进口原装现货,假一赔十 |
询价 |
相关规格书
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相关库存
更多- AS4LC2M8S1-12TC
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- AS4LC4M4F1-50TC
- AS4LC4M4F1-60JC
- AS4LC4M4F1-60TC
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- AS4LC8M8S0-10FTC
- AS4LC8M8S0-75TC
- AS4PD
- AS4PDHM3/86A
- AS4PD-M3/86A
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- AS4SD16M16DG-75/IT
- AS4SD16M16DG-75/XT
- AS4SD16M72PBG-10/ET
- AS4SD16M72PBG-10/XT
- AS4SD16M72PBG-ES
- AS4SD1M16S-10
- AS4SD1M16S-8A
- AS4SD2M32DGX-6ET
- AS4SD2M32DGX-6XT
- AS4SD2M32DGX-75IT
- AS4SD2M32DGX-7ET
- AS4SD2M32DGX-7XT
- AS4SD32M16DGC-75/ET
