4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATUR

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATURES •

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATURES •

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATUR

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS4C4M4DG is a 4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering high speed random access of memory cells within the same row. This device features a +5V (±10%) power supply, refresh cycle (2K), and fast access times (60 and 70ns). FEATUR

文件：2.61017 Mbytes 页数：19 Pages

AUSTIN

4M횞4 CMOS DRAM (Fast Page) 3.3V Family

Functional description The AS4LC4M4F1 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 4,194,304 words × 4 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and w

文件：272.45 Kbytes 页数：14 Pages

ALSC

4M횞4 CMOS DRAM (Fast Page) 3.3V Family

Functional description The AS4LC4M4F1 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 4,194,304 words × 4 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and w

文件：272.45 Kbytes 页数：14 Pages

ALSC

4M횞4 CMOS DRAM (Fast Page) 3.3V Family

Functional description The AS4LC4M4F1 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 4,194,304 words × 4 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and w

文件：272.45 Kbytes 页数：14 Pages

ALSC

4M횞4 CMOS DRAM (Fast Page) 3.3V Family

Functional description The AS4LC4M4F1 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 4,194,304 words × 4 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and w

文件：272.45 Kbytes 页数：14 Pages

ALSC

4M횞4 CMOS DRAM (Fast Page) 3.3V Family

Functional description The AS4LC4M4F1 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 4,194,304 words × 4 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and w

文件：272.45 Kbytes 页数：14 Pages

ALSC