AS4LC说明书PDF资料行情报价爱模MSYSTEM-114ic电子网

首页 >AS4LC>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
AS4LC	文件：150.27 Kbytes Page：4 Pages	Plug-in Signal Conditioners M-UNIT	MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司	MSYSTEM
AS4LC1M16E5	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-50JC	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-50JI	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-50TC	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-50TI	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-60JC	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-60JI	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-60TC	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16E5-60TI	文件：604.06 Kbytes Page：22 Pages	3V 1M X 6 CMOS DRAM (EDO) [AllianceSemiconductor] Functionaldescription TheAS4LC1M16E5isahighperformance16-megabitCMOSDynamicRandomAccessMemory(DRAM)organizedas1,048,576words×16bits.ThedeviceisfabricatedusingadvancedCMOStechnologyandinnovativedesigntechniquesresultinginhighspe	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
AS4LC1M16S0	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S0-10TC	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S0-7TC	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S0-8TC	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1-10TC	文件：712.96 Kbytes Page：28 Pages	3.3V 2M x 8/1M x 16 CMOS synchronous DRAM Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1-10TC	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1-12TC	文件：712.96 Kbytes Page：28 Pages	3.3V 2M x 8/1M x 16 CMOS synchronous DRAM Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1-7TC	文件：721.21 Kbytes Page：29 Pages	3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM Features •Organization -1,048,576words×8bits×2banks(2M×8)11row,9columnaddress -524,288words×16bits×2banks(1M×16)11row,8columnaddress •Allsignalsreferencedtopositiveedgeofclock,fullysynchronous •DualinternalbankscontrolledbyA11(banksel	ALSC Alliance Semiconductor Corporation	ALSC
AS4LC1M16S1-8TC	文件：712.96 Kbytes Page：28 Pages	3.3V 2M x 8/1M x 16 CMOS synchronous DRAM Functionaldescription TheAS4LC2M8S1andAS4LC1M16S1arehigh-performance16-megabitCMOSSynchronousDynamicRandomAccessMemory(SDRAM)devicesorganizedas1,048,576words×8bits×2banks(2048rows×512columns)and524,288words×16bits×2banks(2048rows×256columns),respective	ALSC Alliance Semiconductor Corporation	ALSC

12 3 4 5 6 >>>

详细参数

型号：
AS4LC
制造商：
AUSTIN
制造商全称：
Austin Semiconductor
功能描述：
1 MEG x 16 DRAM

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市佳鑫美电子科技有限公司	AS4LC256K16E0-60JCTR	ASC	22+	SOJ	5000	绝对原装自家现货!真实库存!欢迎来电!	询价
深圳市联世界科技有限公司（原深创辉科技）	AS4LC1M16E5-60TC	ALLIANCE			29	原装正品长期供货，如假包赔包换徐小姐13714450367	询价
深圳市毅创腾电子科技有限公司	AS4LC256K16E0-60JCTR	AIL	23+	SOJ/40	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市勤思达科技有限公司	AS4LC256K16E0-60JCTR	ALL	23+	SOJ/40	8000	全新原装现货,欢迎来电咨询	询价
深圳市益百分电子有限公司	AS4LC256K16EO-35JC	ASC	00+	SOJ40	3300	全新原装进口自己库存优势	询价
深圳市一线半导体有限公司	AS4LC1M16E5-60TC		06/07+	SOP	7003		询价
深圳市凯斯宇科技有限公司	AS4LC1M16ES-60TC	ALLAIANCE	2022		8800	原厂原装正品,价格超越代理	询价
齐创科技(上海,北京,青岛)有限公司	AS4LC256K32SO-150QC	ALLIANCE	23+	SOP	5000	原装正品,假一罚十	询价
深圳市星佑电子有限公司	AS4LC1M16ES-60TC	ALLIANCE	06+	TSOP	1000	自己公司全新库存绝对有货	询价
深圳市科恒伟业电子有限公司	AS4LC256K16EO-35JCTR	ALLIANCE	2016+	SOJ40	6523	只做进口原装现货!假一赔十!	询价

更多AS4LC供应商更新时间2024-9-24 16:17:00

详细参数

相关规格书

相关库存