4M횞4 CMOS DRAM (Fast Page) 3.3V Family

Functional description The AS4LC4M4F1 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 4,194,304 words × 4 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and w

文件：272.45 Kbytes 页数：14 Pages

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4M횞4 CMOS DRAM (Fast Page) 3.3V Family

Functional description The AS4LC4M4F1 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 4,194,304 words × 4 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and w

文件：272.45 Kbytes 页数：14 Pages

ALSC

4M횞4 CMOS DRAM (Fast Page) 3.3V Family

Functional description The AS4LC4M4F1 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 4,194,304 words × 4 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and w

文件：272.45 Kbytes 页数：14 Pages

ALSC

4M횞4 CMOS DRAM (Fast Page) 3.3V Family

Functional description The AS4LC4M4F1 is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 4,194,304 words × 4 bits. The device is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and w

文件：272.45 Kbytes 页数：14 Pages

ALSC

3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

Functional description The AS4LC8M8S0 and AS4LC4M16S0 are high-performance 64-megabit CMOS Synchronous Dynamic Random Access Memory (SDRAM) devices organized as 2,097,152 words × 8 bits × 4 banks, and 1,048,576 words × 16 bits × 4 banks, respectively. Very high bandwidth is achieved using a pipel

文件：566.2 Kbytes 页数：24 Pages

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3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

Functional description The AS4LC8M8S0 and AS4LC4M16S0 are high-performance 64-megabit CMOS Synchronous Dynamic Random Access Memory (SDRAM) devices organized as 2,097,152 words × 8 bits × 4 banks, and 1,048,576 words × 16 bits × 4 banks, respectively. Very high bandwidth is achieved using a pipel

文件：566.2 Kbytes 页数：24 Pages

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3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

Functional description The AS4LC8M8S0 and AS4LC4M16S0 are high-performance 64-megabit CMOS Synchronous Dynamic Random Access Memory (SDRAM) devices organized as 2,097,152 words × 8 bits × 4 banks, and 1,048,576 words × 16 bits × 4 banks, respectively. Very high bandwidth is achieved using a pipel

文件：566.2 Kbytes 页数：24 Pages

ALSC

3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

Functional description The AS4LC8M8S0 and AS4LC4M16S0 are high-performance 64-megabit CMOS Synchronous Dynamic Random Access Memory (SDRAM) devices organized as 2,097,152 words × 8 bits × 4 banks, and 1,048,576 words × 16 bits × 4 banks, respectively. Very high bandwidth is achieved using a pipel

文件：566.2 Kbytes 页数：24 Pages

ALSC

3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

Functional description The AS4LC8M8S0 and AS4LC4M16S0 are high-performance 64-megabit CMOS Synchronous Dynamic Random Access Memory (SDRAM) devices organized as 2,097,152 words × 8 bits × 4 banks, and 1,048,576 words × 16 bits × 4 banks, respectively. Very high bandwidth is achieved using a pipel

文件：566.2 Kbytes 页数：24 Pages

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1 MEG x 16 DRAM

文件：195.31 Kbytes 页数：22 Pages

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