AS4LC8M8S0中文资料ALSC数据手册PDF规格书

Functional description

The AS4LC8M8S0 and AS4LC4M16S0 are high-performance 64-megabit CMOS Synchronous Dynamic Random Access Memory (SDRAM) devices organized as 2,097,152 words × 8 bits × 4 banks, and 1,048,576 words × 16 bits × 4 banks, respectively. Very high bandwidth is achieved using a pipelined architecture where all inputs and outputs are referenced to the rising edge of a common clock. Programmable burst mode can be used to read up to a full page of data without selecting a new column address.

Features

• PC100/133 compliant

• Organization

- 2,097,152 words × 8 bits × 4 banks (8M×8)

- 1,048,576 words × 16 bits × 4 banks (4M×16)

• Fully synchronous

- All signals referenced to positive edge of clock

• Four internal banks controlled by BA0/BA1 (bank select)

• High speed

- 133/125/100 MHz

- 5.4 ns (133 MHz)/6 ns (125/100 MHz) clock access time

• Low power consumption

- Standby: 7.2 mW max, CMOS I/O

• 4096 refresh cycles, 64 ms refresh interval

• Auto refresh and self refresh

• Automatic and direct precharge

• Burst read, single write operation

• Can assert random column address in every cycle

• LVTTL compatible I/O

• 3.3V power supply

• JEDEC standard package, pinout and function

- 400 mil, 54-pin TSOP II

• Read/write data masking

• Programmable burst length (1/2/4/8/full page)

• Programmable burst sequence (sequential/interleaved)

• Programmable CAS latency (2/3)