isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件：994.11 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Limit Alarms (potentiometer adj.) A-UNIT

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MSYSTEM

爱模

Limit Alarms (potentiometer adj.) A-UNIT

文件：126.99 Kbytes 页数：4 Pages

MSYSTEM

爱模

Limit Alarms (potentiometer adj.) A-UNIT

文件：126.99 Kbytes 页数：4 Pages

MSYSTEM

爱模