Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：151.84 Kbytes 页数：8 Pages

AOSMD

万国半导体

丝印：4918；Package：SOP-8；Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 9.3 A (VGS = 10V) ● RDS(ON)

文件：2.18349 Mbytes 页数：7 Pages

KEXIN

科信电子

MOSFET：Dual-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：151.58 Kbytes 页数：8 Pages

AOSMD

万国半导体

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：151.58 Kbytes 页数：8 Pages

AOSMD

万国半导体

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4918 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

文件：151.84 Kbytes 页数：8 Pages

AOSMD

万国半导体

Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AOS

美国万代