AO4612-HF

Marking：4612；Package：SOP-8；Complementary Trench MOSFET

■Features ●N-Channel: VDS(V)=60V ID=4.5A(VGS=10V) RDS(ON)

AO4612L

ComplementaryEnhancementModeFieldEffectTransistor

GeneralDescription TheAO4612usesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedinH-bridge,Invertersandotherapplications.StandardproductAO4612isPb-free(meetsROHS&Sony259specifications).AO4612Lisa

CNXDF4612

DCABLEASSEMBLY

DM4612P

MAGNETICPOWDERCORES

EFC4612R

General-PurposeSwitchingDeviceApplications

EFC4612R

N-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

Features •2.5Vdrive •Built-ingateprotectionresistor •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •Halogenfreecompliance

EFC4612R

N-ChannelPowerMOSFET

Features •2.5Vdrive •Built-ingateprotectionresistor •BestsuitedforLiBcharginganddischargingswitch •Common-draintype •Halogenfreecompliance

EFC4612R

General-PurposeSwitchingDeviceApplications

EFC4612R-S

PowerMOSFET

ThisPowerMOSFETfeaturesalowon-stateresistance.Thisdeviceissuitableforapplicationssuchaspowerswitchesofportablemachines.Bestsuitedfor1-2cellslithium-ionbatteryapplications. Features •2.5Vdrive •Common-Draintype •ESDDiode-ProtectedGate •Pb-Free,HalogenFree

EFC4612R-S-TR

PowerMOSFET

ThisPowerMOSFETfeaturesalowon-stateresistance.Thisdeviceissuitableforapplicationssuchaspowerswitchesofportablemachines.Bestsuitedfor1-2cellslithium-ionbatteryapplications. Features •2.5Vdrive •Common-Draintype •ESDDiode-ProtectedGate •Pb-Free,HalogenFree