丝印：4612；Package：SOP-8；Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 60V ID = 4.5 A (VGS = 10V) RDS(ON)

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KEXIN

科信电子

Complementary Enhancement Mode Field Effect Transistor

General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AO4612 is Pb-free (meets ROHS & Sony 259 specifications). AO4612L is a

文件：142.98 Kbytes 页数：7 Pages

AOSMD

万国半导体

CSP Enhancement Mode Power MOSFET

Features - It is ESD protected. - This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration.

文件：501.44 Kbytes 页数：6 Pages

COMCHIP

典琦

D CABLE ASSEMBLY

文件：69.31 Kbytes 页数：1 Pages

VCC