丝印：AO4443；Package：SOP-8；-40V P-Channel Enhancement Mode MOSFET

General Features VDS = -40V ID = -8 A RDS(ON)

文件：1.60605 Mbytes 页数：5 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4443；Package：SOP-8；-40V P-Channel Enhancement Mode MOSFET

Description The AO4443 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -40V ID = -8 A RDS(ON)

文件：1.12004 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：AO4443；Package：SOP-8；-40V P-Channel Enhancement Mode MOSFET

General Features VDS = -40V ID = -8 A RDS(ON)

文件：1.60605 Mbytes 页数：5 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4443；Package：SOP-8；-40V P-Channel Enhancement Mode MOSFET

Description The AO4443 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -40V ID = -8 A RDS(ON)

文件：1.12004 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4443 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4443 is Pb-free (meets ROHS & Sony 259 specifications). AO4443L is a Green Pr

文件：114 Kbytes 页数：4 Pages

AOSMD

万国半导体

P-Channel MOSFET

■ Features ● VDS (V) =-40V ● ID =-6.5 A (VGS =-10V) ● RDS(ON)

文件：1.26422 Mbytes 页数：4 Pages

KEXIN

科信电子

40V P-Channel MOSFET

General Description The AO4443 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS -40V ID (

文件：2.18332 Mbytes 页数：5 Pages

WHXPCB

万和兴电子

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：959.63 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel MOSFET

■ Features ● VDS (V) =-40V ● ID =-6.5 A (VGS =-10V) ● RDS(ON)

文件：1.47421 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4443 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4443 is Pb-free (meets ROHS & Sony 259 specifications). AO4443L is a Green Pr

文件：114 Kbytes 页数：4 Pages

AOSMD

万国半导体