丝印：6R；Package：SC-76；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：234.92 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6R；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：235.89 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6R；Package：SOT-233L；N-Channel Switch

Features • This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers • Sourced from Process 51 • Source & Drain are Interchangeable • These are Pb−Free Devices

文件：450.3 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：6R；Package：SOT-23；N-Channel Switch

Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers • Sourced from Process 51. • Source & Drain are interchangeable.

文件：101.26 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：6R；Package：SOT363；80 V, 100 mA NPN/PNP resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：377.23 Kbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6R；Package：SC-88；80 V, 100 mA NPN/PNP resistor-equipped double transistors

1. General description NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA NPN/NPN complement: PNP/PNP complement: NHUMD10 2.2 47 NH

文件：377.26 Kbytes 页数：20 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6R；Package：SOT883；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET tec

文件：280.6 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6R；Package：SOT23；CAN bus ESD protection diode

1.1 General description PESD2CAN in a small SOT23 Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. 1.2 Features and benefits  Max. peak pulse p

文件：703.9 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：6R；Package：WCSP6E；2A, 25mΩ Load Switch IC with Slew Rate Control Driver

The TCK2292xG and TCK2297xG are load switch ICs for power management with slew rate control driver featuring wide input voltage operation from 1.1 to 5.5 V. Switch ON resistance is only 25 mΩ typical at 5.0 V, -0.5 A load condition and these feature a slew rate control driver. TCK2292xG has out

文件：564.08 Kbytes 页数：15 Pages

TOSHIBA

东芝

丝印：6R；MOS ANALOG INTEGRATED CIRCUIT

FEATURES • Low Noise : NV = −99 dBV TYP. @ VDD = 3 V, Cin = 3 pF, RL = 2.2 kΩ • High Gain : GV = +6 dB TYP. @ VDD = 3 V, Cin = 3 pF, RL = 2.2 kΩ • Low Consumption Current : IDD = 200 μA TYP. @ VDD = 3 V, RL = 2.2 kΩ • 3-pin thin lead-less minimold (1.2 × 1.0 × 0.33 mm)

文件：288.67 Kbytes 页数：9 Pages

RENESAS

瑞萨