TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV)

Switching Regulator Applications • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancemen

文件：203.88 Kbytes 页数：6 Pages

TOSHIBA

东芝

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isc N-Channel MOSFET Transistor

文件：323.36 Kbytes 页数：2 Pages

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文件：192.87 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件：186.45 Kbytes 页数：6 Pages

TOSHIBA

东芝

Power MOSFET

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Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications

Toshiba

东芝

Silicon N Channel MOS Type

文件：192.87 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件：186.45 Kbytes 页数：6 Pages

TOSHIBA

东芝