MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID

文件：245.24 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, I

文件：69.94 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID

文件：245.24 Kbytes 页数：10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID

文件：245.24 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1= 8.5 mΩMAX. (VGS= 10 V, ID= 35 A) RDS(on)2= 12 mΩMAX. (VGS= 4.0 V, I

文件：69.94 Kbytes 页数：8 Pages

NEC

瑞萨

Silicon N-Channel MOS FET

Secondary battery pack (Li ion battery, etc.) For switching ■ Features ● High-speed switching ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. ● Low-voltage drive (Vth: −1 to 2V) ● Low Ron

文件：30.85 Kbytes 页数：2 Pages

PANASONIC

松下

丝印：T100；Package：MPT3；Small switching (60V, 2A)

Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. Structure Silicon N-channel MOS FET t

文件：85.22 Kbytes 页数：4 Pages

ROHM

罗姆

Small switching (60V, 2A)

Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. Structure Silicon N-channel MOS FET t

文件：85.22 Kbytes 页数：4 Pages

ROHM

罗姆

Small switching (60V, 2A)

Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. Structure Silicon N-channel MOS FET t

文件：85.22 Kbytes 页数：4 Pages

ROHM

罗姆

Chopper Regulator

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.) ● High forward transfer admittance : |Yfs| = 1.7 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID

文件：128.99 Kbytes 页数：3 Pages

TOSHIBA

东芝